MODELING OF HETEROSTRUCTURES FOR NANOELECTRONIC DEVICES: TIGHT BINDING VIEW


Article NameMODELING OF HETEROSTRUCTURES FOR NANOELECTRONIC DEVICES: TIGHT BINDING VIEW
AuthorsH. Hakan GÜREL , Özden AKINCI , Hilmi ÜNLÜ
Keywords TRTasarım , Sıkı bağlam kuramı , Heteroyapılar , Nanoelektronik.
KeywordsModeling , Tight Binding Theory , Heterostructures , Nanoelectronics.
Article Summary Advances in growing semiconductor thin films of different physical and chemical properties has provided new opportunities in basic science studies and device applications in electronics industry. Realization of the full potentials of semiconductor heterostructures for nanoscale electronic and optoelectronic device technologies require reliable and precise predictive process and performance simulation models that are consistent with the fundamental principles of solid state physics and quantum mechanics. In this review article, we present a tight binding view of the atomistic materials theory based modeling of heterostructure nanoscale devices. The Modeling golden miners of gold miner games play online for Nanoelectronics by miner. The models are the empirical sp3 and sp3s* tight binding theories in which the parameters are obtained from a fit to the real band structures of semiconductors. Using this scheme, we discuss the modeling of the electronic band structure of technologically important AlGaAs/GaAs heterostructures. We believe that the tight binding theory should be useful in understanding the effects of electronic band structure of heterostructures on charge transport and performance of nanoscale devices.
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